All Class 12 Physics formulas

The formulas from 14 chapters, in one place to revise from or print. Open a chapter's own sheet to see where students usually slip up.

1. Electric Charges and Fields

Charge and force

Quantisation of charge
q=ne\displaystyle q = ne

e = 1.6 × 10⁻¹⁹ C.

Coulomb's law
F=14πε0q1q2r2\displaystyle F = \frac{1}{4\pi\varepsilon_0}\frac{q_1q_2}{r^2}

1/(4πε₀) ≈ 9 × 10⁹ N m² C⁻².

Electric field of a point charge
E=14πε0qr2\displaystyle E = \frac{1}{4\pi\varepsilon_0}\frac{q}{r^2}
Force on a charge in a field
F⃗=qE⃗\displaystyle \vec F = q\vec E

Electric dipole

Dipole moment
p⃗=q(2a⃗)\displaystyle \vec p = q(2\vec a)

Points from negative to positive charge.

Field on the axis
E=14πε02pr3\displaystyle E = \frac{1}{4\pi\varepsilon_0}\frac{2p}{r^3}

For r much larger than a.

Field on the equatorial line
E=14πε0pr3\displaystyle E = \frac{1}{4\pi\varepsilon_0}\frac{p}{r^3}

Opposite in direction to p.

Torque in a uniform field
τ⃗=p⃗×E⃗\displaystyle \vec\tau = \vec p\times\vec E

Gauss's law

Electric flux
Φ=∮E⃗⋅dA⃗=qenclosedε0\displaystyle \Phi = \oint\vec E\cdot d\vec A = \frac{q_{\text{enclosed}}}{\varepsilon_0}
Infinite line of charge
E=λ2πε0r\displaystyle E = \frac{\lambda}{2\pi\varepsilon_0 r}
Infinite plane sheet
E=σ2ε0\displaystyle E = \frac{\sigma}{2\varepsilon_0}
Outside a charged spherical shell
E=14πε0qr2\displaystyle E = \frac{1}{4\pi\varepsilon_0}\frac{q}{r^2}

Inside the shell, E = 0.

2. Electrostatic Potential and Capacitance

Potential

Potential of a point charge
V=14πε0qr\displaystyle V = \frac{1}{4\pi\varepsilon_0}\frac{q}{r}
Potential of a dipole
V=14πε0pcos⁡θr2\displaystyle V = \frac{1}{4\pi\varepsilon_0}\frac{p\cos\theta}{r^2}

Zero on the equatorial plane.

Field from potential
E=−dVdr\displaystyle E = -\frac{dV}{dr}
Potential energy of two charges
U=14πε0q1q2r\displaystyle U = \frac{1}{4\pi\varepsilon_0}\frac{q_1q_2}{r}
Dipole energy in a uniform field
U=−p⃗⋅E⃗\displaystyle U = -\vec p\cdot\vec E

Capacitors

Capacitance
C=QV\displaystyle C = \frac{Q}{V}
Parallel plate capacitor
C=ε0Ad\displaystyle C = \frac{\varepsilon_0 A}{d}
With a dielectric filling the gap
C=Kε0Ad\displaystyle C = \frac{K\varepsilon_0 A}{d}
Series combination
1C=1C1+1C2\displaystyle \frac{1}{C} = \frac{1}{C_1} + \frac{1}{C_2}

Same charge on each.

Parallel combination
C=C1+C2\displaystyle C = C_1 + C_2

Same voltage across each.

Energy stored
U=Q22C=12CV2=12QV\displaystyle U = \frac{Q^2}{2C} = \tfrac12 CV^2 = \tfrac12 QV
Energy density
u=12ε0E2\displaystyle u = \tfrac12\varepsilon_0 E^2

3. Current Electricity

Current and resistance

Current
I=dqdt=neAvd\displaystyle I = \frac{dq}{dt} = neAv_d
Drift velocity
vd=eEτm\displaystyle v_d = \frac{eE\tau}{m}
Ohm's law
V=IR\displaystyle V = IR
Resistance
R=ρLA\displaystyle R = \frac{\rho L}{A}
Conductivity
σ=1ρ=ne2τm\displaystyle \sigma = \frac{1}{\rho} = \frac{ne^2\tau}{m}
Current density
J=IA=σE\displaystyle J = \frac{I}{A} = \sigma E
Temperature dependence
ρT=ρ0[1+α(T−T0)]\displaystyle \rho_T = \rho_0[1 + \alpha(T - T_0)]

Combinations and power

Series
R=R1+R2\displaystyle R = R_1 + R_2
Parallel
1R=1R1+1R2\displaystyle \frac{1}{R} = \frac{1}{R_1} + \frac{1}{R_2}
Power
P=VI=I2R=V2R\displaystyle P = VI = I^2R = \frac{V^2}{R}

Cells and networks

Terminal voltage
V=ε−Ir\displaystyle V = \varepsilon - Ir
Cells in series
εeq=ε1+ε2,req=r1+r2\displaystyle \varepsilon_{\text{eq}} = \varepsilon_1 + \varepsilon_2, \quad r_{\text{eq}} = r_1 + r_2
Cells in parallel
εeqreq=ε1r1+ε2r2,1req=1r1+1r2\displaystyle \frac{\varepsilon_{\text{eq}}}{r_{\text{eq}}} = \frac{\varepsilon_1}{r_1} + \frac{\varepsilon_2}{r_2}, \quad \frac{1}{r_{\text{eq}}} = \frac{1}{r_1} + \frac{1}{r_2}
Kirchhoff's junction rule
∑I=0\displaystyle \sum I = 0
Kirchhoff's loop rule
∑V=0\displaystyle \sum V = 0
Balanced Wheatstone bridge
PQ=RS\displaystyle \frac{P}{Q} = \frac{R}{S}

4. Moving Charges and Magnetism

Force

Lorentz force
F⃗=q(E⃗+v⃗×B⃗)\displaystyle \vec F = q(\vec E + \vec v\times\vec B)
Force on a wire
F⃗=IL⃗×B⃗\displaystyle \vec F = I\vec L\times\vec B
Radius in a magnetic field
r=mvqB\displaystyle r = \frac{mv}{qB}
Cyclotron frequency
ν=qB2πm\displaystyle \nu = \frac{qB}{2\pi m}

It doesn't depend on speed.

Force between parallel wires
FL=μ0I1I22πd\displaystyle \frac{F}{L} = \frac{\mu_0 I_1I_2}{2\pi d}

Like currents attract.

Magnetic field

Biot-Savart law
dB⃗=μ04πI dl⃗×r^r2\displaystyle d\vec B = \frac{\mu_0}{4\pi}\frac{I\,d\vec l\times\hat r}{r^2}
Long straight wire
B=μ0I2πr\displaystyle B = \frac{\mu_0 I}{2\pi r}
Centre of a circular loop
B=μ0I2R\displaystyle B = \frac{\mu_0 I}{2R}
Axis of a circular loop
B=μ0IR22(R2+x2)3/2\displaystyle B = \frac{\mu_0 IR^2}{2(R^2 + x^2)^{3/2}}
Ampere's law
∮B⃗⋅dl⃗=μ0Ienclosed\displaystyle \oint\vec B\cdot d\vec l = \mu_0 I_{\text{enclosed}}
Long solenoid
B=μ0nI\displaystyle B = \mu_0 nI

n is turns per unit length.

Current loops

Magnetic moment
m⃗=NIA⃗\displaystyle \vec m = NI\vec A
Torque on a loop
τ⃗=m⃗×B⃗\displaystyle \vec\tau = \vec m\times\vec B
Galvanometer to ammeter
S=IgGI−Ig\displaystyle S = \frac{I_gG}{I - I_g}

Shunt in parallel.

Galvanometer to voltmeter
R=VIg−G\displaystyle R = \frac{V}{I_g} - G

High resistance in series.

5. Magnetism and Matter

Bar magnet

Field on the axis
B=μ04π2mr3\displaystyle B = \frac{\mu_0}{4\pi}\frac{2m}{r^3}
Field on the equator
B=μ04πmr3\displaystyle B = \frac{\mu_0}{4\pi}\frac{m}{r^3}
Torque in a uniform field
τ⃗=m⃗×B⃗\displaystyle \vec\tau = \vec m\times\vec B
Potential energy
U=−m⃗⋅B⃗\displaystyle U = -\vec m\cdot\vec B
Time period in a field
T=2πImB\displaystyle T = 2\pi\sqrt{\frac{I}{mB}}
Gauss's law for magnetism
∮B⃗⋅dA⃗=0\displaystyle \oint\vec B\cdot d\vec A = 0

There are no isolated magnetic poles.

Magnetic materials

Magnetisation
M=mnetV\displaystyle M = \frac{m_{\text{net}}}{V}
Total field
B=μ0(H+M)\displaystyle B = \mu_0(H + M)
Susceptibility
χ=MH\displaystyle \chi = \frac{M}{H}
Permeability
μ=μ0μr,μr=1+χ\displaystyle \mu = \mu_0\mu_r, \quad \mu_r = 1 + \chi
Curie's law
χ=Cμ0T\displaystyle \chi = \frac{C\mu_0}{T}

For paramagnetic materials.

6. Electromagnetic Induction

Induced EMF

Magnetic flux
Φ=B⃗⋅A⃗=BAcos⁡θ\displaystyle \Phi = \vec B\cdot\vec A = BA\cos\theta
Faraday's law
ε=−NdΦdt\displaystyle \varepsilon = -N\frac{d\Phi}{dt}

The minus sign is Lenz's law.

Motional EMF
ε=Blv\displaystyle \varepsilon = Blv
Rotating coil
ε=NBAωsin⁡ωt\displaystyle \varepsilon = NBA\omega\sin\omega t

Inductance

Self-inductance
Φ=LI,ε=−LdIdt\displaystyle \Phi = LI, \quad \varepsilon = -L\frac{dI}{dt}
Long solenoid
L=μ0n2Al\displaystyle L = \mu_0 n^2 Al
Mutual inductance
Φ2=MI1,ε2=−MdI1dt\displaystyle \Phi_2 = MI_1, \quad \varepsilon_2 = -M\frac{dI_1}{dt}
Energy in an inductor
U=12LI2\displaystyle U = \tfrac12 LI^2

7. Alternating Current

AC values

Instantaneous voltage
v=vmsin⁡ωt\displaystyle v = v_m\sin\omega t
RMS current
I=im2≈0.707 im\displaystyle I = \frac{i_m}{\sqrt2} \approx 0.707\,i_m
RMS voltage
V=vm2\displaystyle V = \frac{v_m}{\sqrt2}

Reactance and impedance

Inductive reactance
XL=ωL\displaystyle X_L = \omega L

Current lags voltage by π/2.

Capacitive reactance
XC=1ωC\displaystyle X_C = \frac{1}{\omega C}

Current leads voltage by π/2.

Impedance of an LCR circuit
Z=R2+(XL−XC)2\displaystyle Z = \sqrt{R^2 + (X_L - X_C)^2}
Phase angle
tan⁡ϕ=XL−XCR\displaystyle \tan\phi = \frac{X_L - X_C}{R}

Resonance and power

Resonant frequency
ω0=1LC\displaystyle \omega_0 = \frac{1}{\sqrt{LC}}

Here X_L = X_C and Z = R.

Quality factor
Q=ω0LR=1RLC\displaystyle Q = \frac{\omega_0 L}{R} = \frac{1}{R}\sqrt{\frac{L}{C}}
Average power
P=VIcos⁡ϕ\displaystyle P = VI\cos\phi
Power factor
cos⁡ϕ=RZ\displaystyle \cos\phi = \frac{R}{Z}

Transformer

Voltage and turns
VsVp=NsNp=IpIs\displaystyle \frac{V_s}{V_p} = \frac{N_s}{N_p} = \frac{I_p}{I_s}

For an ideal transformer.

8. Electromagnetic Waves

Formulas

Displacement current
id=ε0dΦEdt\displaystyle i_d = \varepsilon_0\frac{d\Phi_E}{dt}
Speed in vacuum
c=1μ0ε0=3×108 m/s\displaystyle c = \frac{1}{\sqrt{\mu_0\varepsilon_0}} = 3\times10^8\ \text{m/s}
Speed in a medium
v=1με\displaystyle v = \frac{1}{\sqrt{\mu\varepsilon}}
Ratio of the fields
E0B0=c\displaystyle \frac{E_0}{B_0} = c
Wave relation
c=νλ\displaystyle c = \nu\lambda
Energy density
uav=12ε0E02\displaystyle u_{\text{av}} = \tfrac12\varepsilon_0E_0^2

Spectrum, longest to shortest wavelength

  • Radio, microwaves, infrared, visible, ultraviolet, X-rays, gamma rays.
  • Frequency and photon energy increase in the same order.
  • Visible light runs from about 400 nm (violet) to 700 nm (red).
  • E, B and the direction of travel are all perpendicular to each other.

9. Ray Optics and Optical Instruments

Mirrors

Focal length
f=R2\displaystyle f = \frac{R}{2}
Mirror equation
1v+1u=1f\displaystyle \frac{1}{v} + \frac{1}{u} = \frac{1}{f}
Magnification
m=−vu\displaystyle m = -\frac{v}{u}

Refraction

Snell's law
n1sin⁡i=n2sin⁡r\displaystyle n_1\sin i = n_2\sin r
Apparent depth
apparent depth=real depthn\displaystyle \text{apparent depth} = \frac{\text{real depth}}{n}
Critical angle
sin⁡C=1n\displaystyle \sin C = \frac{1}{n}

For light going from the denser medium into air.

Refraction at a spherical surface
n2v−n1u=n2−n1R\displaystyle \frac{n_2}{v} - \frac{n_1}{u} = \frac{n_2 - n_1}{R}

Lenses

Lens equation
1v−1u=1f\displaystyle \frac{1}{v} - \frac{1}{u} = \frac{1}{f}
Lens maker's formula
1f=(n−1)(1R1−1R2)\displaystyle \frac{1}{f} = (n - 1)\left(\frac{1}{R_1} - \frac{1}{R_2}\right)
Magnification
m=vu\displaystyle m = \frac{v}{u}
Power
P=1f\displaystyle P = \frac{1}{f}

f in metres gives P in dioptres.

Lenses in contact
1f=1f1+1f2,P=P1+P2\displaystyle \frac{1}{f} = \frac{1}{f_1} + \frac{1}{f_2}, \quad P = P_1 + P_2

Prism and instruments

Prism angles
A=r1+r2,δ=i+e−A\displaystyle A = r_1 + r_2, \quad \delta = i + e - A
Refractive index of a prism
n=sin⁡A+δm2sin⁡A2\displaystyle n = \frac{\sin\frac{A + \delta_m}{2}}{\sin\frac{A}{2}}
Thin prism
δ=(n−1)A\displaystyle \delta = (n - 1)A
Simple microscope
m=1+Df\displaystyle m = 1 + \frac{D}{f}

Image at the near point D.

Compound microscope
m=Lfo⋅Dfe\displaystyle m = \frac{L}{f_o}\cdot\frac{D}{f_e}
Telescope
m=fofe\displaystyle m = \frac{f_o}{f_e}

Normal adjustment. Tube length is f_o + f_e.

10. Wave Optics

Interference

Bright fringes
Δx=nλ\displaystyle \Delta x = n\lambda

Constructive, n = 0, 1, 2, ...

Dark fringes
Δx=(n+12)λ\displaystyle \Delta x = \left(n + \tfrac12\right)\lambda

Destructive.

Path difference in YDSE
Δx=ydD\displaystyle \Delta x = \frac{yd}{D}
Fringe width
β=λDd\displaystyle \beta = \frac{\lambda D}{d}
Resultant intensity
I=I1+I2+2I1I2cos⁡ϕ\displaystyle I = I_1 + I_2 + 2\sqrt{I_1I_2}\cos\phi
Phase from path
ϕ=2πλΔx\displaystyle \phi = \frac{2\pi}{\lambda}\Delta x

Diffraction

Minima of a single slit
asin⁡θ=nλ\displaystyle a\sin\theta = n\lambda

n = 1, 2, 3, ...

Width of the central maximum
w=2λDa\displaystyle w = \frac{2\lambda D}{a}

Polarisation

Malus's law
I=I0cos⁡2θ\displaystyle I = I_0\cos^2\theta
Brewster's law
n=tan⁡iB\displaystyle n = \tan i_B

11. Dual Nature of Radiation and Matter

Photoelectric effect

Photon energy
E=hν=hcλ\displaystyle E = h\nu = \frac{hc}{\lambda}

hc ≈ 1240 eV nm.

Photon momentum
p=hνc=hλ\displaystyle p = \frac{h\nu}{c} = \frac{h}{\lambda}
Einstein's equation
Kmax⁡=hν−ϕ0\displaystyle K_{\max} = h\nu - \phi_0
Stopping potential
eV0=Kmax⁡\displaystyle eV_0 = K_{\max}
Work function
ϕ0=hν0\displaystyle \phi_0 = h\nu_0

ν₀ is the threshold frequency.

Matter waves

de Broglie wavelength
λ=hp=hmv\displaystyle \lambda = \frac{h}{p} = \frac{h}{mv}
From kinetic energy
λ=h2mK\displaystyle \lambda = \frac{h}{\sqrt{2mK}}
Electron through potential V
λ=1.227V nm\displaystyle \lambda = \frac{1.227}{\sqrt V}\ \text{nm}

12. Atoms

Bohr model

Quantised angular momentum
mvr=nh2π\displaystyle mvr = \frac{nh}{2\pi}
Radius of the nth orbit
rn=0.529 n2Z A˚\displaystyle r_n = 0.529\,\frac{n^2}{Z}\ \text{Å}
Speed in the nth orbit
vn=2.19×106 Zn m/s\displaystyle v_n = 2.19\times10^6\,\frac{Z}{n}\ \text{m/s}
Energy of the nth orbit
En=−13.6 Z2n2 eV\displaystyle E_n = -13.6\,\frac{Z^2}{n^2}\ \text{eV}
Energy of a photon
hν=Ei−Ef\displaystyle h\nu = E_i - E_f

Hydrogen spectrum

Rydberg formula
1λ=R(1nf2−1ni2)\displaystyle \frac{1}{\lambda} = R\left(\frac{1}{n_f^2} - \frac{1}{n_i^2}\right)

R ≈ 1.097 × 10⁷ m⁻¹.

Number of spectral lines
N=n(n−1)2\displaystyle N = \frac{n(n - 1)}{2}

From level n down to level 1.

Series names

  • Lyman ends at n = 1 (ultraviolet).
  • Balmer ends at n = 2 (visible).
  • Paschen ends at n = 3, Brackett at n = 4 and Pfund at n = 5 (all infrared).

13. Nuclei

Nucleus

Nuclear radius
R=R0A1/3\displaystyle R = R_0A^{1/3}

R₀ ≈ 1.2 fm. Nuclear density is about the same for all nuclei.

Mass-energy relation
E=mc2\displaystyle E = mc^2

1 u ≈ 931.5 MeV.

Mass defect
Δm=[Zmp+(A−Z)mn]−M\displaystyle \Delta m = [Zm_p + (A - Z)m_n] - M
Binding energy
Eb=Δm c2\displaystyle E_b = \Delta m\,c^2

Radioactive decay

Decay law
N=N0e−λt\displaystyle N = N_0e^{-\lambda t}
Activity
R=λN=R0e−λt\displaystyle R = \lambda N = R_0e^{-\lambda t}
Half-life
T1/2=ln⁡2λ=0.693λ\displaystyle T_{1/2} = \frac{\ln 2}{\lambda} = \frac{0.693}{\lambda}
Mean life
τ=1λ\displaystyle \tau = \frac{1}{\lambda}
Left after n half-lives
N=N02n\displaystyle N = \frac{N_0}{2^n}

Decays

  • Alpha decay: A falls by 4 and Z by 2.
  • Beta-minus decay: Z rises by 1, and A stays the same.
  • Gamma decay: A and Z both stay the same, and only energy is released.
  • Fission splits heavy nuclei and fusion joins light ones. Both release energy because binding energy per nucleon rises.

14. Semiconductor Electronics: Materials, Devices and Simple Circuits

Formulas

Intrinsic semiconductor
ne=nh=ni\displaystyle n_e = n_h = n_i
Mass action law
nenh=ni2\displaystyle n_en_h = n_i^2
Current in a semiconductor
I=Ie+Ih\displaystyle I = I_e + I_h
Half-wave rectifier output
νout=νin\displaystyle \nu_{\text{out}} = \nu_{\text{in}}
Full-wave rectifier output
νout=2νin\displaystyle \nu_{\text{out}} = 2\nu_{\text{in}}

Key facts

  • n-type: doped with pentavalent atoms such as phosphorus, and electrons are the majority carriers.
  • p-type: doped with trivalent atoms such as boron, and holes are the majority carriers.
  • Both types stay electrically neutral overall.
  • Forward bias narrows the depletion region and current flows. Reverse bias widens it, and only a tiny current flows.
  • An insulator has a large band gap, a semiconductor a small one, and a conductor none or overlapping bands.

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